Fakitale yogulitsa Snubber Yapamwamba Yamphamvu Ya Thyristor - Mapangidwe apamwamba kwambiri a IGBT Snubber capacitor akugwiritsa ntchito mphamvu zambiri - CRE

Fakitale yopangidwa ndi moto yogulitsa Snubber For High Powered Thyristor - High-class IGBT Snubber capacitor design yamagetsi apamwamba - CRE Featured Image

Kufotokozera Kwachidule:

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Kanema Wogwirizana

Ndemanga (2)

Wodzipereka ku kasamalidwe kokhazikika komanso ntchito zamakasitomala oganiza bwino, makasitomala athu odziwa zambiri amapezeka kuti akambirane zomwe mukufuna ndikukutsimikizirani chisangalalo chonse cha kasitomala.Ac Capacitor Pazida Zowotcherera , Electronic Film Capacitor , Cylindrical Aluminium Case Film Capacitor, Tikulandira ndi mtima wonse abwenzi ochokera padziko lonse lapansi kuti agwirizane nafe pamaziko a ubwino wa nthawi yaitali.

Fakitale yopangidwa ndi Snubber Yapamwamba Yamphamvu Ya Thyristor - Mapangidwe apamwamba kwambiri a IGBT Snubber capacitor akugwiritsa ntchito mphamvu zambiri - CRE Tsatanetsatane:

Deta yaukadaulo

Opaleshoni kutentha osiyanasiyana	Kutentha kwapamwamba kwambiri.,Pamwamba,kuposa: +105℃ Kutentha kwapamwamba: +85 ℃ M'munsi gulu kutentha: -40 ℃
mtundu wa capacitance	0.1μF-5.6μF
Adavotera mphamvu	700V.DC ~3000V.DC
Cap.tol	±5%(J);±10%(K)
Kupirira voltage	1.5Un DC/10S
Zowonongeka	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Insulation resistance	C≤0.33μF RS≥15000 MΩ (at20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S(at20℃ 100V.DC 60S)
Pitirizani kumenyedwa	onani tsatanetsatane
Kuchedwa kwa moto	UL94V-0
Chiyembekezo cha moyo	100000h(Un; Θhotspot≤85°C)
Reference muyezo	IEC61071;GB/T17702;

Tabulo lachidziwitso

Voteji	Un 700V.DC,Urms400Vac;Us1050V
	Diemension (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33
Voteji	Un 1000V.DC,Urms500Vac;Us1500V
	Diemension (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk (A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32
Voteji	Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk (A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32
Voteji	Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk (A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32
Voteji	Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk (A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32
Voteji	Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk (A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Zithunzi zatsatanetsatane wazinthu:

Zogwirizana nazo:

Tili ndi mwayi wabwino kwambiri pakati pa zomwe tikuyembekezera pazamalonda athu apamwamba kwambiri, mtengo wampikisano komanso ntchito yabwino ya Factory made Hot-sale Snubber For High Powered Thyristor - High-class IGBT Snubber capacitor design for high power applications - CRE, The product ipereka kudziko lonse lapansi, monga: Seychelles, Manchester, Brasilia, Gulu lathu laukatswiri waukadaulo lidzakhala lokonzeka kukutumikirani kuti mukambirane ndi kuyankha.Titha kukupatsiraninso zitsanzo zaulere kuti mukwaniritse zomwe mukufuna.Khama labwino kwambiri lidzapangidwa kuti likupatseni ntchito yabwino komanso katundu.Kwa aliyense amene akuganiza za kampani yathu ndi malonda, onetsetsani kuti mwatitumizira maimelo kapena mutitumizireni mwachangu.Monga njira yodziwira malonda athu ndi olimba.zambiri, mutha kubwera kufakitale yathu kuti mudzadziwe.Tidzalandila alendo ochokera padziko lonse lapansi kubizinesi yathu kuti apange ubale wamakampani ndi ife.Onetsetsani kuti muli omasuka kulumikizana nafe pazamalonda ndipo tikukhulupirira kuti takhala tikukonzekera kugawana nawo zamalonda apamwamba kwambiri ndi amalonda athu onse.

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