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Ma Capacitor Osefera Apamwamba aku China - Axial GTO snubber capacitors - CRE

Ma Capacitor Osefera Apamwamba aku China - Axial GTO snubber capacitors - CRE Chithunzi Chowonetsedwa
  • Ma Capacitor Osefera Apamwamba aku China - Axial GTO snubber capacitors - CRE
  • Ma Capacitor Osefera Apamwamba aku China - Axial GTO snubber capacitors - CRE
  • Ma Capacitor Osefera Apamwamba aku China - Axial GTO snubber capacitors - CRE

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Tsitsani ngati PDF

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Kanema Wogwirizana

Ndemanga (2)

Titha kukupatsirani malonda apamwamba kwambiri ndi mayankho, mpikisano wampikisano komanso chithandizo chabwino kwambiri cha ogula.Komwe tikupita ndi "Mwabwera kuno movutikira ndipo tikukupatsani kumwetulira kuti mutenge" chifukwaSnubber Film Capacitor , Dc Capacitor Pazida Zachipatala , Filimu Capacitor Ya New Energy Power System, Chifukwa cha khalidwe lapamwamba komanso mtengo wampikisano , tidzakhala mtsogoleri wa msika, chonde musazengereze kutilankhulana ndi foni kapena imelo, ngati mukufuna chilichonse mwazinthu zathu.
Ma Capacitor Osefera Apamwamba aku China - Axial GTO snubber capacitors - CRE Tsatanetsatane:

Deta yaukadaulo

Ntchito kutentha osiyanasiyana Kutentha kwa Max.Operating.,Pamwamba,Max: + 85℃Kutentha kwa gulu lapamwamba: +85℃Kutentha kwapansi: -40℃
mtundu wa capacitance 0.1μF-5.6μF
Adavotera mphamvu

630V.DC ~2000V.DC
Cap.tol

±5%(J) ;±10%(K)
Kupirira voltage

1.5Un DC/10S
Zowonongeka

tgδ≤0.0005 C≤1μF f=10KHz

tgδ≤0.001 C≥1μF f=10KHz
Insulation resistance

C≤0.33μF RS≥15000 MΩ (pa 20℃ 100V.DC 60S)

C＞0.33μF RS*C≥5000S (pa 20℃ 100V.DC 60S)
Pitirizani kumenyedwa
Chiyembekezo cha moyo

100000h(Un; Θhotspot≤85°C)
Reference muyezo

IEC 61071; IEC 61881;GB/T17702

Kugwiritsa ntchito

1. IGBT Snubber.

2. Amagwiritsidwa ntchito kwambiri mu mphamvu zamagetsi zida pamene nsonga voteji, pachimake panopa mayamwidwe chitetezo.

Kujambula autilaini

 

1

 

 

 

 

SMJ-TE Axial Capacitor
Voteji Un630V.DC;Urms400Vac;Us 945V
Kuthekera (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk (A) Irms @25℃ @100KHz (A)
0.22 32 9.5 17.5 0.8 16 23 300 66 5.3
0.33 32 12 20 1 13 22 200 66 6.5
0.47 32 14.5 22.5 1 11 21 220 103.4 8.3
0.68 32 18 26 1 10 20 180 122.4 9.5
1 37 11 19 1 8 28 150 150 7.6
1.5 37 13.5 21.5 1 7 27 150 225 9.5
2 37 16 24 1.2 6 24 130 260 10.2
2.5 37 18 26 1.2 5.5 25 120 300 10.5
3 37 20 28 1.2 5 30 110 330 10.8
3.3 37 21 29 1.2 4.5 30 110 363 11.2
4 57 27 36.5 1.2 4.2 32 220 880 12.8
4.7 57 28 40.5 1.2 3.8 32 200 940 13.8
5.6 57 31 33.5 1.2 3.5 32 185 1036 13.5
6.8 37 29 41.5 1.2 2.5 28 100 680 13.8
6.8 57 34 46.5 1.2 2.8 30 180 1224 14.2

 

Voteji Un 1000V.DC; Urms 500Vac; Us 1500V
Kuthekera (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk (A) Irms @25℃ @100KHz (A)
0.15 32 10 17.5 0.8 20 20 1100 165 5.5
0.22 32 12 20 1 15 21 1000 220 7.3
0.33 32 15.5 23 1 13 21 1000 330 8.7
0.47 32 18.5 26 1.2 10 23 1000 470 10.5
0.47 44 14 22 1.2 9 24 900 423 9.5
0.68 32 20 32.5 1.2 7 25 900 612 10.8
0.68 44 17 25 1.2 6 26 800 544 10.2
1 44 21.5 29.5 1.2 5.6 27 900 900 11
1.5 44 26 35.5 1.2 5 29 900 1350 12
1.5 57 21 29 1.2 5 30 700 1050 12.2
2 44 28 40.5 1.2 4.8 30 800 1600 13.2
2 57 24 33.5 1.2 4.8 32 600 1200 12.8
2.2 44 30 42.5 1.2 4.2 32 600 1320 13.8
2.2 57 25 34.5 1.2 4.2 32 500 1100 13.5
2.5 57 25 38 1.2 4 33 500 1250 14.2
3 57 28 40.5 1.2 3.5 34 480 1440 15.6
3.3 57 29.5 42 1.2 3.2 35 450 1485 16.5
3.5 57 30.5 43 1.2 3.2 35 450 1575 17.2
4.7 57 35 50.5 1.2 3 36 420 1974 17.8
5.6 57 38.5 65 1.2 2.8 38 400 2240 18.2

 

Voteji Un 1200V.DC; Urms 550Vac; Us 1800V
Kuthekera (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk (A) Irms @25℃ @100KHz (A)
0.1 32 8.5 16 0.8 20 20 1300 130 6
0.15 32 10 17.5 1 18 20 1200 180 7.5
0.22 32 13 21 1 15 22 1200 264 8.3
0.33 32 16 24 1 12 23 1200 396 9
0.47 32 17.5 30 1.2 10 23 1200 564 9.5
0.47 44 15 23 1.2 9 26 1100 517 9.8
0.68 32 21.5 34 1.2 8 25 1100 517 10
0.68 44 18.5 26.5 1.2 6 27 1000 680 11.7
1 44 23 31 1.2 5 28 1000 1000 12.4
1.5 44 26.5 39 1.2 5 30 950 1425 13.5
1.5 57 22.5 30.5 1.2 5 29 900 1350 12.6
2 44 29 45 1.2 5 30 800 1600 14.2
2 57 26.5 34.5 1.2 4.8 30 750 1500 13.8
2.2 44 31 47 1.2 4.2 32 800 1760 14.5
2.2 57 27.5 35.5 1.2 4.2 35 700 1540 14.5
3 57 29 44.5 1.2 3.2 37 500 1500 17.2
3.3 57 30.5 46 1.2 3.2 38 450 1485 17.8
4.7 57 38 53.5 1.2 3 38 420 1974 18.2

 

Voteji Un 1700V.DC; Urms 600Vac; Us 2550V
Kuthekera (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk (A) Irms @25℃ @100KHz (A)
0.1 32 9.5 17.5 0.8 18 25 1300 130 7.5
0.15 32 12 20 1 16 24 1200 180 8.5
0.22 32 15 23 1 15 24 1200 264 9.3
0.33 32 18.5 26.5 1 12 22 1200 396 9.9
0.33 44 13.5 21.5 1.2 12 29 1100 363 10.2
0.47 44 16 24 1.2 9 28 1000 470 11.2
0.68 44 20 28 1.2 8 27 1000 680 11.7
1 44 24 33.5 1.2 5.6 26 900 900 12.4
1 57 19.5 27.5 1.2 6 33 850 850 10.8
1.5 44 28 40.5 1.2 4.8 25 800 1200 13.5
1.5 57 24 32 1.2 5 33 750 1125 13.5
2 44 31.5 47 1.2 4.5 24 750 1500 14.2
2 57 27.5 37 1.2 4.8 32 650 1300 12.8
2.2 44 33.5 49 1.2 4.5 34 700 1540 15.6
2.2 57 29 40 1.2 4.2 32 600 1320 14.5
3 57 31 46.5 1.2 4 30 560 1680 17.2
3.3 57 33 48.5 1.2 3.2 29 500 1650 17.6
4 57 37 52.5 1.2 3 28 450 1800 18.2

 

Voteji Un 2000V.DC;Urms 700Vac;Us 3000V
Kuthekera (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk (A) Irms @25℃ @100KHz (A)
0.068 32 9 17 0.8 25 23 1500 102 6.9
0.1 32 11.5 19.5 1 18 22 1500 150 8.2
0.1 37 10.5 18.5 1 18 26 1450 145 8
0.22 32 17.5 25.5 1.2 15 21 1400 308 9.1
0.22 37 16 24 1.2 15 25 1300 286 9
0.33 37 20 28 1.2 12 24 1250 412.5 9.5
0.33 44 18 26 1.2 12 30 1200 396 10.2
0.47 44 19.5 32 1.2 10 29 1100 517 12.4
0.68 44 24 36.5 1.2 8 28 1000 680 14.2
0.68 57 18.5 31 1.2 8 27 900 612 14.2
1 57 23.5 36 1.2 6 31 950 950 14.5
1.5 57 29.5 42 1.2 5 31 850 1275 14.5
2 57 33 48.5 1.2 4.2 31 750 1500 16.5
2.2 57 35 50.5 1.2 4 30 700 1540 17.8

 

Voteji Un 3000V.DC; Urms 750Vac; Us 4500V
Kuthekera (uF) L (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk (A) Irms @25℃ @100KHz (A)
0.047 44 13.5 21.5 1 22 20 2000 94 8.5
0.068 44 17 25 1 20 20 1800 122.4 10.5
0.1 44 20.5 28.5 1.2 18 20 1500 150 12.4
0.15 44 26 34 1.2 16 22 1350 202.5 13.8
0.22 44 29 41.5 1.2 14.5 22 1200 264 14.5
Zithunzi zatsatanetsatane wazinthu:

Ma Capacitor Osefera Apamwamba aku China - Axial GTO snubber capacitors - CRE mwatsatanetsatane zithunzi

Ma Capacitor Osefera Apamwamba aku China - Axial GTO snubber capacitors - CRE mwatsatanetsatane zithunzi

Ma Capacitor Osefera Apamwamba aku China - Axial GTO snubber capacitors - CRE mwatsatanetsatane zithunzi

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Ndi luso lathu lotsogola panthawi imodzi ndi mzimu wa luso, mgwirizano, maubwino ndi kupita patsogolo, tidzamanga tsogolo labwino ndi wina ndi mnzake ndi kampani yanu yolemekezeka ya China yogulitsa High-Performance Ac Filtering Capacitors - Axial GTO snubber capacitors - CRE , Mankhwalawa azipereka padziko lonse lapansi, monga: Zurich, Doha, Jersey, Pazaka 11, tachita nawo ziwonetsero zopitilira 20, timapeza kutamandidwa kwakukulu kuchokera kwa kasitomala aliyense.Kampani yathu nthawi zonse imafuna kupatsa makasitomala zinthu zabwino kwambiri zotsika mtengo.Tikuchita khama kwambiri kuti tikwaniritse izi ndikukulandirani ndi mtima wonse kuti mugwirizane nafe.Lowani nafe, onetsani kukongola kwanu.Tidzakhala nthawi zonse kusankha kwanu koyamba.Tikhulupirireni, simudzataya mtima.
    • Zogulitsa zosiyanasiyana ndizokwanira, zabwino komanso zotsika mtengo, zoperekerazo zimathamanga komanso zoyendera ndi chitetezo, zabwino kwambiri, ndife okondwa kugwirizana ndi kampani yodziwika bwino! 5 Nyenyezi Ndi Elaine wochokera ku Porto - 2017.04.08 14:55
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